PART |
Description |
Maker |
HY27SS08121M HY27US16121M Y27US08121M |
Search --To HY27US081M (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
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Hynix Semiconductor
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HY27US08121A HY27US16121A HY27SS08121A HY27SS16121 |
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
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Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
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K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632 |
512Mbit SDRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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HYB25L512160AC-75 HYB25L512160AC |
512MBit Mobile-RAM
|
INFINEON[Infineon Technologies AG]
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H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM 512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
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M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
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TH58512DC |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
ST62E30BF1 ST6230BM1/XXX ST62P30BM3/XXX ST62P30BM6 |
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|CERAMIC MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|SOP|28PIN|PLASTIC IC, 60FBGA, 512MBIT DDR DRAM 60 PIN BGA 32MBX16 MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|PLASTIC IC, MEM, SDRAM DDR166, 32 MEG X 16, 16 BIT, 6NS, 2.5V, FBGA60 单片机| 8位| ST6200的CPU |的CMOS |专科| 28脚|塑料
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Black Box, Corp.
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